| PART |
Description |
Maker |
| PTF10139 |
60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor 60瓦，860-960兆赫GOLDMOS场效应晶体管
|
ERICSSON[Ericsson]
Ericsson Microelectronics
|
| SD1496 RF617 |
RF & MICROWAVE TRANSISTORS 860-900 MHz CLASS C, BASE STATIONS
From old datasheet system
|
MICROSEMI[Microsemi Corporation]
|
| SD1420 RF415 |
RF & MICROWAVE TRANSISTORS 860-900 MHz CLASS AB BASE STATIONS
From old datasheet system
|
MICROSEMI[Microsemi Corporation]
|
| PTF080101S |
Thermally-Enhanced High Power RF LDMOS FET 10 W, 860 - 960 MHz
|
Infineon Technologies AG
|
| PTF10019 |
70 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor
70 Watts, 860-960 MHz GOLDMOS Field Effect Transistor
70 Watts, 86060 MHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
Ericsson Microelectronics
|
| PTB20237 |
150 Watts 470-860 MHz UHF TV Power Transistor
150 Watts, 470-860 MHz UHF TV Power Transistor
|
ERICSSON[Ericsson]
|
| 0912LD20 |
20 Watts, 28 Volts Pulsed Avionics 960 to 1215 MHz LDMOS FET
|
Microsemi Corporation
|
| MICRF003 MICRF003BM MICRF033BM MICRF003/033 |
RES, 14.3K, 1/16W, TKF, 1%, 0603
QwikRadiotm 900 MHz UHF Receiver Preliminary Information
QwikRadio™ 900 MHz UHF Receiver
|
Micrel Semiconductor,Inc.
MICREL[Micrel Semiconductor]
|
| MAAV-007087-000100 MAAV-007087-0001TB MAAV-007087- |
900 MHz - 2500 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 1.5 dB INSERTION LOSS-MAX
Voltage Variable Attenuator 900 - 2500 MHz
|
Tyco Electronics
|
| BLF6G27S-4508 BLF6G27S-45 BLF6G27-45 |
Product description45 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
WiMAX power LDMOS transistor
|
NXP Semiconductors N.V.
|
